Method of etching cavities and apertures in substrates and devic

Details Method of etching cavities and apertures in substrates and devic Method of etching cavities and apertures in substrates and devic

1983-02-04

1984-05-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156644, 1566591, 156647, 156664, H01L 21306, C23F 102, B44C 122, C03C 1500

Patent

active

044486359

ABSTRACT:
Deep cavities and apertures can be obtained with little undercutting (great etching factor) by etching in an artificial gravitational field (under the influence of centrifugal or centripetal forces).

REFERENCES:
patent: 2867929 (1959-01-01), Monahan
patent: 2869266 (1959-01-01), Hirdler
patent: 3383255 (1968-05-01), Rossi et al.
patent: 3730799 (1973-05-01), Scannell
patent: 4137118 (1979-01-01), Brimm

Affiliated with

Also associated with

Rating

Method of etching cavities and apertures in substrates and devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching cavities and apertures in substrates and devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching cavities and apertures in substrates and devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-843436