Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-29
2009-02-24
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S712000
Reexamination Certificate
active
07494934
ABSTRACT:
A method of etching a carbon-containing layer on a semiconductor substrate using a Si-containing gas and a related method of fabricating a semiconductor device in which a plurality of contact holes having excellent sidewall profiles are formed by etching an interlayer insulating layer using a carbon-containing layer pattern formed in accordance with the invention and having a width of several tens of nm as an etch mask are provided. To etch a carbon-containing layer to be used as a second etch mask, a first mask pattern is formed on the carbon-containing layer to partially expose a top surface of the carbon-containing layer. The carbon-containing layer is then anisotropically etched with a plasma of a carbon-etching mixture gas formed of O2and a Si-containing gas using the first mask pattern as a first etch mask to form the carbon-containing layer pattern. Neighboring contact holes in a high-density cell array region fabricated in accordance with this invention are distinctly separated from each other, even when an interval between the neighboring contact holes is as small as several tens of nm or less; and, thus, a short-circuit between neighboring unit cells using such contact holes can be prevented.
REFERENCES:
patent: 6547977 (2003-04-01), Yan et al.
patent: 6703265 (2004-03-01), Asami et al.
patent: 6835663 (2004-12-01), Lipinski
patent: 7115524 (2006-10-01), Honeycutt et al.
patent: 2004/0079726 (2004-04-01), Tabery et al.
patent: 06-349782 (1994-12-01), None
patent: 2004-031892 (2004-01-01), None
patent: 2001-0042419 (2001-05-01), None
patent: 10-2004-0003652 (2004-01-01), None
patent: WO 99/52135 (1999-10-01), None
Harrison Monica D
Mills & ONello, LLP
Monbleau Davienne
Samsung Electronics Co,. Ltd.
LandOfFree
Method of etching carbon-containing layer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of etching carbon-containing layer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching carbon-containing layer and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116487