Method of etching back layer on substrate

Details Method of etching back layer on substrate Method of etching back layer on substrate

1996-04-26

1998-04-07

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438694, 438700, 438702, 438424, 438425, H01L 21336

Patent

active

057364621

ABSTRACT:
An intermediate layer is formed on a portion which becomes a projecting portion of a step difference formed on a semiconductor substrate, a layer to be polished having a slower polishing rate than the intermediate layer is formed to cover intermediate layer and fill a recessed portion of the step difference, and then polishing is carried out over an area from this layer to be polished to the intermediate layer. Further, it is also possible to form a stopper layer having a slower polishing rate than the layer to be polished under the intermediate layer. In the polishing, a fluctuation of the rotational torque of the polishing machine of a predetermined value or more or an interference color may be used for detection of the end point of polishing.

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patent: 5510652 (1996-04-01), Burke et al.
patent: 5561078 (1996-10-01), Taskaka

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