Method of etching anti-reflection coating

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430314, 430317, 430323, 156643, 156646, 156653, 156654, 156657, G03C 500

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053087429

ABSTRACT:
A polyimide layer used in manufacturing semiconductor integrated circuits is etched in a plasma comprising O.sub.2, Ar, and CHF.sub.3. The plasma produces excellent critical dimension control and yields good resist to polyimide etching selectivity.

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American Chemical Society 25, "Characterization and Processing of Polyimide Thin Films for Microelectronics Application," by J. H. Lai et al, pp. 38-40.
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Journal of the Electrochemical Society, 130, "Dry Etching of Polyimide in O.sub.2 -CF.sub.4 and O.sub.2 -SF.sub.6 Plasmas," by Gurban et al., 1983, pp. 2231-2236.
Journal of Vacuum Science and Technology A9(3), "Polyimide Etching in Ar, O.sub.2, and O.sub.2 /F.sub.2 Gas Mixtures: Effect of Ion Energy," by Tepermeister, et al., May/Jun. 1991, pp. 790-795.
Plasma Chemistry and Plasma Processing, vol. 6, No. 4, by Kogoma et al., Mar. 10, 1986, pp. 349-380.
Patent Application, "Integrated Circuit Fabrication Process Using a Bilayer Resist," by Messrs. Cuthbert, Fu, Olasupo Ser. No. 07/708,956, filed May 31, 1991, pp. 1-9.

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