Method of etching an oxide layer

Details Method of etching an oxide layer Method of etching an oxide layer

1994-04-28

1995-11-21

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 15665911, 216 67, 216 75, H01L 21306, C03C 1500, B44C 122

Patent

active

054683424

ABSTRACT:
A method of etching openings in oxide layers is disclosed. A hard mask layer is formed on the oxide layer. The hard mask layer is then patterned by a photoresist layer and an etch is performed to form openings in the hard mask. Next, the patterning layer may be removed and an etch is performed to remove the oxide in the regions defined by the hard mask layer openings. The etch with hard mask has minimized aspect ratio dependency, so that openings of different sizes may be formed simultaneously. An etch that may be carried out with Freon 134a (C.sub.2 H.sub.2 F.sub.4) to provide superior oxide:nitride selectivity is also disclosed. Additionally, the etch may be carried out at high temperature for improved wall profile without loss of selectivity. For deep openings, a two step etch process is disclosed, with a polymer clean step between the etches to remove polymer build up from first etch, and allow the etch to proceed to an increased depth.

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