Method of etching an oxide layer

Details Method of etching an oxide layer Method of etching an oxide layer

1994-12-07

1996-10-08

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 15665911, 216 37, 216 67, 437228, H01L 2100

Patent

active

055628010

ABSTRACT:
A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.

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