Method of etching aluminum alloys in semi-conductor wafers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156641, 156646, 156665, 252 793, 20419235, C03C 1500

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048389927

ABSTRACT:
A plasma etching technique for producing tapered side walls on the desired Aluminum conductor pattern is described. This involves forming a resist pattern on the Aluminum layer of a wafer and carrying out a first etching step using Cl.sub.2, BCl.sub.3 and CF.sub.4 at predetermined flow rates and low pressure until all the exposed Aluminum is removed. At the end of this step the Aluminum side walls are virtually vertical and facets are present on the resist. A second etching step is carried out under essentially the same conditions as before except that the Cl.sub.2 is reduced. During this etching step the facets on the resist are propagated laterally while the Aluminum side walls become tapered. According to modifications a rounded or jogged configuration can be obtained on the side walls but these too are considered generally tapered in nature as they progress from a wider base to a narrower peak.

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