Method of etching a wafer having high anisotropy with a plasma g

Details Method of etching a wafer having high anisotropy with a plasma g Method of etching a wafer having high anisotropy with a plasma g

1991-06-06

1994-04-19

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912141, 156643, 156646, 20429838, B23K 900

Patent

active

053047753

ABSTRACT:
Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.

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patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5007374 (1991-04-01), Yamazaki et al.
patent: 5013579 (1991-05-01), Yamazaki
patent: 5082685 (1992-01-01), Morooka
patent: 5133830 (1992-07-01), Asaka
Fujiwara, Nobuo, ECR Plasma Etching with Heavy Halogen Ions, Japanese Journal of Applied Physics, vol. 29, No. 10, 1990.
Uetake, Hiroaki, et al, Anisotrophic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher, Appl. Phys. Lett. 57(6), Aug. 1990.
Patents Abstracts of Japan, Vapor Phase Etching Method, vol. 11/No. 29, Sep. 1987.

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