Method of etching a surface of an indium phosphide part

Details Method of etching a surface of an indium phosphide part Method of etching a surface of an indium phosphide part

1988-03-31

1989-08-29

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156664, C23F 100

Patent

active

048614238

ABSTRACT:
A wafer of indium phosphide is disposed between two electrodes (102, 104) in a heated enclosure (100) into which ducts (110 and 112) admit nitrogen and ammonia. A high frequency electricity generator (108) forms a plasma between the electrodes which etches the exposed surface of the wafer. The invention is applicable, in particular, to forming semiconductor lasers emitting in the infrared for telecommunications purposes.

REFERENCES:
patent: 4326911 (1982-04-01), Howard et al.
patent: 4671847 (1987-06-01), Clawson
patent: 4705760 (1987-11-01), Kaganowicz et al.
patent: 4714518 (1987-12-01), Satyanarayan et al.
patent: 4749440 (1988-06-01), Blackwood et al.
Journal of the Electrochemical Society, vol. 133, No. 10, Oct. 10, 1986, pp. 2204-2205, Manchester, NH, USA; K. Pak et al.: "Vapor-Phase Etching of InP Using Anhydrous HCI and PH3 Gas".
Journal of Vacuum Science & Technology, vol. B3, No. 5, Sep.-Oct. 1985, pp. 1445-1449, American Vacuum Society, Woodbury, New York, USA; M. Hirose et al: "Characterization of Photochemical Processing".

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