Method of etching a substrate by means of chemical beams

Details Method of etching a substrate by means of chemical beams Method of etching a substrate by means of chemical beams

1996-08-08

1999-06-29

Chang, Ceila

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 39, 438504, 438694, 438913, 438944, 117 97, 117103, 156643, H01L 2118

Patent

active

059168226

ABSTRACT:
In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.

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patent: 5362683 (1994-11-01), Takenaka et al.
patent: 5490912 (1996-02-01), Warner et al.
Tsang et al, In-situ Dry Etching of InP Using Phosphorous Tri-Chloride and Re-Growth inside a Chemical Beam Epitaxial Growth Chamber, Mat. Res. Soc. Symp. Proc., vol. 300 (1993).
Saito et al, "GaAs Surface Cleaning with HC1 Gas and Hydrogen Mixture for Molecular-Beam Epitaxial Growth", Japanese Journal of Applied Physics, vol. 27, No. 4(2), Apr. 1988, Tokyo, Japan, pp. 1702-1703. corresponding to JP-A-58 095694 dated Jun. 07, 1993.
Takamori et al, Cleaning of MBE GaAs Substrates . . . , Japanese Journal of Applied Physics, vol. 26, No. 2; Feb. 1987, Tokyo, Japan, pp. L142-L144.
Choquette et al, "Hydrogen Plasma Processing ofGaAs and AlGaAs . . ."Journal of Vacuum Science and Technology, Part B, vol. 11, No. 6, Nov. 1993, New York, US pp. 2025-2032s.

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