Method of etching a substrate

Details Method of etching a substrate Method of etching a substrate

1995-09-20

1998-02-24

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430323, G03F 700

Patent

active

057210900

ABSTRACT:
An etching method comprising the steps of forming an etched layer on a wafer and covering the etched layer with an anti-reflection cover and then the anti-reflection cover with a photoresist film, pattern-exposing the photoresist film, developing the exposed photoresist film to form pattern openings in each of which the anti-reflection cover is exposed, and carrying the wafer into a chamber, exhausting the chamber to decompressed atmosphere, and introducing a mixed gas of C.sub.4 F.sub.8 gas and at least one of O.sub.2 and N.sub.2 gases into the process chamber to generate plasma of this mixed gas and act active species in this plasma on the wafer, whereby the anti-reflection cover which is exposed in each of the pattern openings is etched and the etched layer is then etched without etching the photoresist film formed on an inner surface each pattern opening.

REFERENCES:
patent: 5240554 (1993-08-01), Hori
patent: 5437961 (1995-08-01), Yano
Thompson, L.F. (ed.), "Introduction to Microlithography", ACS Symposium Series 219, pp. 223-258 1983.

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