Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1994-09-23
1997-04-08
Niebling, John
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
437935, 148DIG46, 438949, 438947, H01L 21465
Patent
active
056187602
ABSTRACT:
A scanning probe microscope is used to pattern a layer of resist, and the pattern is transferred to a substrate. First, an underlayer formed of, for example, polyimide and a top layer formed of, for example, amorphous silicon are deposited on the substrate. A pattern is formed on the top layer using the tip of the cantilever in a scanning probe microscope. The pattern may consist of an oxide formed by an electric field at the cantilever tip. The top layer is then etched using the pattern as a mask and using an etchant that is selective against the underlayer. The underlayer is then etched using an etchant that is selective against the top layer and substrate. The substrate is etched with an etchant that removes the top layer but is selective against the underlayer. Finally, the underlayer is removed.
REFERENCES:
patent: 4479831 (1984-10-01), Sandow et al.
patent: 5138174 (1992-08-01), Tang
patent: 5221415 (1993-07-01), Albrecht et al.
patent: 5227626 (1993-07-01), Okada et al.
patent: 5254854 (1993-10-01), Betzig
patent: 5345815 (1994-09-01), Albrecht et al.
patent: 5354985 (1994-10-01), Quate
Dagata et al, "Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air", Appl. Phys. Lett. vol. 26, No. 20, May 1990, pp. 2001-2003.
Barniol et al, "Modification of HF-treated silicon (100) surfaces by scanning tunneling microscope under imaging conditions", Appl. Phys. Lett.
Dagata et al, "Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air", J. Vac Sci. B, vol. 9, No. 2 Mar., 1991 pp. 1384-1388.
"Silicon Processing for the VLSI Era vol. 1: Process Technology", Wolf et al., Lattice Press, 1986, pp. 209-210.
"Nanometer Lithography on Silicon and hydrogenated Amouphous Silicon with Low Energy Electrons", Kramer et al., abstract, International Conference on Micro and Nanofabrication, Sep. 1994.
"Silicon Processing for the VLSI Era vol. 2: Process Integration", S. Wolf, Lattice Press, pp. 297-300.
N. Kramer et al., "Fabrication of Metallic Nanowires with a Scanning Tunneling Microscope", 1995 American Institute of Physics, Appl. Phys. Lett. 66 (11), 13 Mar. 1995, pp. 1325-1327.
H. Sugimura et al., "Maskless patterning of silicon surface based on scanning tunneling microscope tip-induced anodization and chemical etching", Appl. Phys. Lett. 65(12), 19 Sep. 1994, pp. 1569-1571.
D. Wang et al., "Nanometer-structure writing on Si(100) surfaces using a non-contact-mode atomic force microscope", Appl. Phys. Lett. 65(11), 12 Sep. 1994, pp. 1415-1417.
"Thermomechanical writing with an atomic force microscope tip", H.J. Mamin et al., Appl. Phys. Lett. 61(8), 24 Aug. 1992, pp. 1003-1005.
"The atomic force microscope used as a powerful tool for machining surfaces", T.A. Jung et al., Elsevier Science Publishers, 1992, pp. 1446-1451.
"25 nm chromium oxide lines by scanning tunneling lithography in air", H.J. Song et al., 38th Int'l. Symp. on Electron, Ion and Photon Beams, New Orleans, LA, May 31-Jun. 3, 1994, 16 pgs.
"Nanometer-scale lithography using the atomic force microscope", A. Majumdar et al., Appl. Phys. Lett. 61(19), 9 Nov. 1992, pp. 2293-2295.
"Tip-induced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithography", H. Sugimurar et al., Appl. Phys. Lett. 62(9), 30 Aug. 1993, pp. 1288-1290.
"Nanometer scale patterning of silicon (100) surfaces by an atomic force microscope operating in air", L. Tsau et al., Appl. Phys. Lett. 64(16), 18 Apr. 1994, pp. 2133-2135.
"Fabrication of Si nanostructures with an atomic force microscope", E.S. Snow et al., Appl. Phys. Lett. 64(15), 11 Apr. 1994, pp. 1932-1934.
"Lithographic patterning of self-assembled films", J.M. Calvert, J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2155-2163.
"Self-assembled monolayer electron beam resist on GaAs", R.C. Tiberio et al., Appl. Phys. Lett. 62(5), 1 Feb. 1993, pp. 476-478.
"Low voltage electron beam lithography in self-assembled ultrathin films with the scanning tunneling microscope", C.R.K. Marrian et al, Appl. Phys. Lett. 64(3), 17 Jan. 1994, pp. 390-392.
"Scanning Probe Lithography. 1. Scanning Tunneling Microscope Induced Lithography of Self-Assembled n-Alkanethiol Monolayer Resists", C.B. Ross et al., American Chemical Society, Langmuir, vol. 9, No. 3, 1993, pp. 632-636.
"Modification of Silicon Surface Produced by Electric Field Enhanced Oxidation Through Native Oxide", Y. Ejiri et al., Extended Abstracts of 1993 Int'l. Conf. on Solid State Devices and Materials, 1993, pp. 606-608.
"Fabrication of silicon nanostructures with a scanning tunneling microscope", E.S. Snow et al., Appl. Phys. Lett. 63(6), 9 Aug. 1993, pp. 749-751.
"Nanometre-scale chemical modification using a scanning tunnelling microscope", Y. Utsugi, Nippon Telegraph and Telephone Corp., LSI Laboratories, undated, 2 pgs.
"Atomic Force Microscopy Using A Piezoresistive Cantilever", M. Tortonese et al., IEEE, Mar. 1991, pp. 448-450.
"Fabrication of Si nanostructures with an atomic force microscope", E.S. Snow et al., Appl. Phys. Lett. 64(15), 11 Apr. 1994, 12 pgs.
"Applications of Atomic Force Microscopy for Nanolithography", P.I. Oden et al., undated, 7 pgs.
Technology of proximal probe lithography, "Principles and Techniques of STM Lithography", M.A. McCord et al, 1993, The Society of Photo-Optical Instrumentation Engineers, pp. 16-32.
Technology of proximal probe lithography, "Low Voltage E-Beam Lithography With The STM", C.R.K. Marrian et al., 1993, The Society of Photo-Optical Instrumentation Engineers, pp. 58-73.
Technology of proximal probe lithography, "The Technology of Proximal Probe Lithography: An Overview", J.A. Dagata et al, 1993, The Society of Photo-Optical Instrumentation Engineers, pp. 3-11.
"Nanometer lighography on silion and hydrogenated amorphous silicon with low energy electrons", N. Kramer et al., undated, 30 pgs.
"Silicon transfer layer for multilayer resist systems", J.B. Kruger et al., J.Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 1320-1324.
Minne Stephen C.
Quate Calvin F.
Soh Hyongsok
Bilodeau Thomas G.
Niebling John
Steuber David E.
The Board of Trustees of the Leland Stanford Jr. University
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