Method of etching a magnetic material

Details Method of etching a magnetic material Method of etching a magnetic material

2005-06-28

2005-06-28

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S689000, C438S694000, C438S706000, C438S710000

Reexamination Certificate

active

06911346

ABSTRACT:
A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist.

REFERENCES:
patent: 4411757 (1983-10-01), Kitada et al.
patent: 4439294 (1984-03-01), Willibrordus et al.
patent: 5589263 (1996-12-01), Ueda et al.
patent: 5867890 (1999-02-01), Hsiao et al.
patent: 6024885 (2000-02-01), Resnick et al.
patent: 2003/0170985 (2003-09-01), Hwang et al.
patent: 0 889 506 (1999-01-01), None
patent: 2 331 273 (1999-05-01), None
Jung, et al., “Development of electron cyclotron resonance and inductively couled plasma high density plasma etching for patterning of NiFeCo,” J. Vac. Sci. Technol. A, 16(3), May/Jun. 1998, 1697-1701.
Jung, et al., “High rate dry etching of Ni0.8Fe0.2and NiFeCo,” Appl. Phys. Lett, 71(9), Sep. 1, 1997, 1255-1257.
Jung, et al., “Relative merits of Ci2and CO/NH3plasma chemistries for dry etching of magnetic random access memory device elements,” Journal of Applied Phys. 85(8), Apr. 15, 1999, 4788-4790.
Cho et al., “Corrosion-Free Dry Etch Patterning of Magnetic Random Access Memory Stacks: Effects of Ultraviolet Illumination”,Journal of Applied Physics, American Institute of Physics, XP-000954014, vol. 87, No. 9, May 1, 2000, pp., 6397-6399.
Van Delft et al., “The Etch Mechanisms of Magnetic Materials in an HCI Plasma”,Journal of Nuclear Materials, XP008022404, 1993 pp. 366-370.

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