Method of etching

Details Method of etching Method of etching

1992-10-09

1993-11-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156627, 156628, 156642, 156657, 156662, 252 793, 252 794, H01L 21306, B44C 122

Patent

active

052661520

ABSTRACT:
Disclosed is a method of etching comprising preparing an etching solution containing hydrofluoric acid and nitric acid, and etching while adding nitrite ion or a medium for producing nitrite acid ion to the etching solution. As the medium for producing the nitrite ion, silicon with a high impurity concentration, a mixed acid solution containing hydrofluoric acid and nitric acid having been used for dissolving a great amount of silicon, or gaseous nitrogen dioxide may be used. Preferably, the concentration of nitrite ion in the etching solution is detected based on the concentration of NO.sub.x in the gas phase which is in an equilibrium relation to the nitrite ion in the liquid phase of the etching solution, and necessary nitrite ion are added to the etching solution based on the concentration of NO.sub.x.

REFERENCES:
patent: 3592773 (1971-07-01), Muller
patent: 4071397 (1978-01-01), Estreicher et al.
patent: 4681657 (1987-07-01), Hwang et al.
patent: 4971654 (1990-11-01), Schnegg et al.

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