Method of erasing in non-volatile memory device

Details Method of erasing in non-volatile memory device Method of erasing in non-volatile memory device

2011-06-07

2011-06-07

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185240, C365S185290

Reexamination Certificate

active

07957199

ABSTRACT:
An erasing method in a nonvolatile memory device is disclosed. The method includes post-programming dummy memory cells; verifying whether threshold voltages of the dummy memory cells are greater than or equal to a first voltage; post-programming normal memory cells; and verifying whether threshold voltages of the normal memory cells are greater than or equal to a second voltage. The first voltage is different from the second voltage, and the post-programming of the dummy memory cells comprises: applying a program voltage to a plurality of dummy word lines coupled to the dummy memory cells to post-program the dummy memory cells; and applying a pass voltage to a plurality of normal word lines coupled to the normal memory cells so that the normal memory cells are not post-programmed.

REFERENCES:
patent: 7266019 (2007-09-01), Taoka et al.
patent: 7535764 (2009-05-01), Chin et al.
patent: 7768835 (2010-08-01), Goda
patent: 7778085 (2010-08-01), Kim et al.
patent: 2006/0139997 (2006-06-01), Park et al.
patent: 07-050096 (1995-02-01), None
patent: 11-306785 (1999-11-01), None
patent: 2004-127346 (2004-04-01), None
patent: 2003-0089316 (2003-11-01), None
patent: 2006-0074179 (2006-07-01), None
patent: 2006-0110755 (2006-10-01), None

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