Method of erasing data in flash memory device

Details Method of erasing data in flash memory device Method of erasing data in flash memory device

2011-07-26

2011-07-26

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185220, C365S185230, C365S185140

Reexamination Certificate

active

07986565

ABSTRACT:
A method of erasing data in a flash memory device, including erasing data in at least one flash memory cell using a first erase voltage; detecting whether the at least one flash memory cell has a threshold voltage less than a first voltage; programming the at least one flash memory cell by varying the threshold voltage of the at least one flash memory cell using a second voltage that is greater than the first voltage if the detecting step detects the threshold voltage is less than the first voltage; maintaining the threshold voltage of the at least one flash memory cell if the detecting step detects the threshold voltage is greater than the first voltage; and verifying the at least one flash memory cell using a first verification voltage.

REFERENCES:
patent: 6466484 (2002-10-01), Sakakibara et al.
patent: 2008/0298124 (2008-12-01), Wong
patent: 10-2001-0061460 (2001-07-01), None
patent: 10-2001-0061470 (2001-07-01), None

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