Method of erasing a resistive memory device

Details Method of erasing a resistive memory device Method of erasing a resistive memory device

2011-03-29

2011-03-29

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S185190, C365S185290

Reexamination Certificate

active

07916523

ABSTRACT:
In a first method of erasing a resistive memory device, an electrical potential is applied to the gate of a transistor in series with the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials across the resistive memory device. In a second method of erasing a resistive memory device, an electrical potential is applied across the resistive memory device, and successive increasing currents are provided through the resistive memory device by means of providing successive increasing electrical potentials to the gate of a transistor in series with the resistive memory device.

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