Method of epitaxially growing semiconductor crystal using light

Details Method of epitaxially growing semiconductor crystal using light Method of epitaxially growing semiconductor crystal using light

1992-11-30

1993-10-19

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 356382, 356318, C30B 2302

Patent

active

052542076

ABSTRACT:
Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.

REFERENCES:
patent: 4068125 (1978-01-01), Bell
patent: 4999508 (1991-03-01), Hyakumura
patent: 5047639 (1991-09-01), Wong
patent: 5096533 (1992-03-01), Igayashi
patent: 5171399 (1992-12-01), Brennan et al.

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