Method of epitaxial growth employing electromigration

Details Method of epitaxial growth employing electromigration Method of epitaxial growth employing electromigration

1977-10-28

1980-01-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 204 39, 427 86, B01J 1704

Patent

active

041860454

ABSTRACT:
A method of liquid phase epitaxial (LPE) growth of, for example, a semiconductor material or an oxide material whereby growth upon a seed in a seed-solution system is affected by passing electric current in an appropriate direction to effect migration of the materials to the growth interface or away from the interface and then cause deposition of desired materials upon said growth interface.

REFERENCES:
patent: 2842467 (1958-07-01), Landauer
patent: 3086857 (1963-04-01), Pfann
patent: 3411946 (1968-11-01), Tramposch
patent: 3600294 (1971-08-01), Rubin
patent: 3879235 (1975-04-01), Gatos
patent: 4012242 (1977-03-01), Matare
Research, C&EN, Aug. 11, 1969, pp. 32-33.
Jastrzebski, J. of Electrochem. Soc., Jul. 1976, pp. 1121-1122.
Lawrence, J. of Crystal Growth, 30, 1975, pp. 267-275.
Kimagawa et al., J. Electrochem. Soc.Solid-State Sci. & Tech., Apr. 1973, pp. 583-584.
Lichtensteiger, J. Electrochem. Soc. Solid State Science, Jun. 1971, pp. 1013-1014.

Affiliated with

Also associated with

Rating

Method of epitaxial growth employing electromigration does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of epitaxial growth employing electromigration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of epitaxial growth employing electromigration will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-880609