Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-04-29
2008-04-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21528
Reexamination Certificate
active
10527313
ABSTRACT:
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimized so as to obtain semiconductor with useful photoconductive properties.
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Evans Michael J.
Tribe William R.
Coleman W. David
Dickstein & Shapiro LLP
TeraView Limited
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