Method of enhancing the performance of a magnetron sputtering ta

Details Method of enhancing the performance of a magnetron sputtering ta Method of enhancing the performance of a magnetron sputtering ta

1991-12-23

1992-12-29

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429803, 20429817, 20429818, 20429819, 2042982, C23C 1435

Patent

active

051748754

ABSTRACT:
A plasma confining magnetic field is generated over the sputtering region of a sputtering target with a critical field line which determines the shape of the plasma. The critical field line is progressively flattened over the course of the life of the target as the target erodes. Preferably, the magnet is configured with poles spaced around the portion of the target below the sputtering region to provide a magnetic field that flattens as its strength decreases. A regulated power supply maintains a regulated power level that is increased as the target erodes to maintain a constant deposition rate. The voltage delivered by the power supply is maintained at or above a constant level by progressively decreasing the current to an electromagnet to progressively reduce the field strength and flatten the field. As a result of the invention, the erosion groove of the target is broadened and the number of wafers coated by the target during its life is increased.

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