Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1996-05-02
1997-12-09
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272481, 437233, 437919, 437967, C23C 1624
Patent
active
056958196
ABSTRACT:
A thermal decomposition CVD method is provided for forming a polysilicon layer over a stepped surface on a semiconductor wafer. The method includes introducing a continuous flow of silicon precursor gases into a vacuum chamber, and adjusting the flow rates and concentrations of the precursor gases, adjusting the temperature and adjusting the pressure within the vacuum chamber so as to control the growth rate of the polysilicon layer on the substrate to between about 500 angstroms/minute and about 2000 angstroms/minute. In a preferred embodiment of the invention, the growth rate of the polysilicon layer is controlled by adjusting the precursor gas flow rates, the temperature and the pressure to between about 1000 angstroms/minute and about 1500 angstroms/minute with the result that the average step coverage of the polysilicon layer is greater than about 95 percent.
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Beinglass Israel
Venkatesan Mahalingam
Applied Materials Inc.
Edelman Lawrence
King Roy V.
Morris Birgit E.
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