Method of enhancing an etch system

Details Method of enhancing an etch system Method of enhancing an etch system

2006-02-28

2010-11-23

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S706000, C257S415000, C257SE21320, C257SE21613

Reexamination Certificate

active

07838322

ABSTRACT:
Systems and techniques for enhanced etch processes. For example, a substrate may be received in an etch chamber, where the substrate comprises a handle layer, a bonding layer in communication with the handle layer, and a device layer in communication with the bonding layer. The device layer may comprise a device layer patterned therein and having a bottom surface, where the bottom surface of the device is attached to the bonding layer. The bonding layer may comprise an oxide annealed at relatively low temperature. A dry etch process may be performed to release the bottom surface of the device from the bonding layer.

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Won I. Jang et al. “Fabrication of MEMS Devices by Using Anhydrous HF Gas-Phase Etching with Alcoholic Vapor”, IOP Publishing 2002, pp. 297-306.

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