Method of enclosing copper conductor in a dual damascene process

Details Method of enclosing copper conductor in a dual damascene process Method of enclosing copper conductor in a dual damascene process

1998-09-17

2000-08-29

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430316, 430317, 430318, G03F 726

Patent

active

061106488

ABSTRACT:
A method is disclosed for enclosing copper conductors in a protective material with the use of a modified dual damascene process. This is accomplished in a first embodiment where the dual damascene structure is formed first by forming either a via or contact hole and then a line trench. In the second embodiment, dual damascene copper interconnect is structured by first forming line trench pattern followed by hole pattern thus forming a composite hole and trench structure which is lined with a barrier material to accept copper metal which in turn is capped with a second barrier material in a cavity that is formed by a critical etch-back of the copper metal. It is shown that the method disclosed is applicable and useful to other trenching techniques and that the problems of corrosion and delamination through diffusion of copper are eliminated.

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patent: 5935762 (1999-08-01), Dai et al.
patent: 6004188 (1999-12-01), Roy
patent: 6017817 (2000-01-01), Chung et al.

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