Method of enclosing a micro-electromechanical element

Details Method of enclosing a micro-electromechanical element Method of enclosing a micro-electromechanical element

2011-01-11

2011-01-11

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S601000, C438S641000, C438S677000, C257SE21479, C257SE21507

Reexamination Certificate

active

07867886

ABSTRACT:
A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material. The method further comprises the step of hydrophobically treating at least a portion of the inner surface of the cavity. Finally the method comprises the steps of submerging the wafer in an electroplating solution and electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution.

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