Method of enabling electrical connection to a substructure formi

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156653, 156656, 156657, 1566591, 156668, 20419237, 357 71, 437192, 437194, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

049484591

ABSTRACT:
A method of enabling electrical connection to a substructure (10) forming part of an electronic device, such as an integrated circuit, is described in which an aluminum-containing electrically conductive level (1) is provided on a surface (12) of the substructure (10), an insulating layer (2) is deposited so as to cover the aluminum-containing electrically conductive level (1), a photosensitive resist layer (3) is provided on the insulating layer and a plasma etching step is then used to etch away insulating material so as to expose an electrically conductive surface to enable electrical connection to be made to the level (1). The insulating material (2) may be etched through a window in the resist layer (3) so as to form a via (14) or the resist layer (3) and insulating material (2) may be etched uniformly to provide a planarized surface. In the method, a layer (4) of another conductive material which is free of aluminum is provided on the level (1) prior to covering the level (1) with insulating material (2) so that the plasma etching step exposes an electrically conductive surface (4a) of the layer (4) of the said other conductive material which thus acts to mask the level (1) to prevent catalytic reaction between the aluminum and constituents in the plasma.

REFERENCES:
patent: 4172004 (1979-10-01), Alcorn et al.
patent: 4396458 (1983-08-01), Platter et al.
patent: 4614021 (1986-09-01), Hulseweh
patent: 4670091 (1987-06-01), Thomas et al.
patent: 4670967 (1987-06-01), Hazuki
patent: 4824521 (1989-04-01), Kulkarni et al.
Sirkin et al., "A Method of Forming Contacts Between Two Conducting Layers Separated by a Dielectric", Journal of Electrochemical Society: Solid-State Science and Technology, vol. 131, No. 1, Jan. 1984, pp. 123-125.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of enabling electrical connection to a substructure formi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of enabling electrical connection to a substructure formi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of enabling electrical connection to a substructure formi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-460586

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.