Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1998-06-03
2000-10-03
Nelms, David
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438514, 438225, 438297, 438452, 438527, H01L 21425
Patent
active
061272477
ABSTRACT:
The present invention proposes a method for forming vertically modulated wells in a semiconductor substrate. The method can include the steps as follows. At first, isolation regions are formed over the substrate. A pad layer is then formed over the substrate and a photoresist layer is formed over the pad layer. Then, p-well regions are defined by removing portions of the photoresist layer. Next, first p-wells are formed in the substrate under the p-well regions. After forming a masking layer over the p-well regions, the photoresist layer is removed. A first thermal process is then performed. Second p-wells are formed in the substrate at a level below the first p-wells. Next, n-wells are formed in the substrate under regions uncovered by the masking layer and above the second p-wells. The masking layer and the pad layer are then removed. Finally, a second thermal process is performed to finish the formation of vertically modulated wells.
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Dang Phuc T.
Nelms David
Texas Instruments - Acer Incorporated
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