Method of eliminating metal voiding in a titanium nitride/alumin

Details Method of eliminating metal voiding in a titanium nitride/alumin Method of eliminating metal voiding in a titanium nitride/alumin

1992-11-06

1994-08-16

Pal, Asok

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429825, 20429826, 20429835, C23C 1434, B65G 4905

Patent

active

053384237

ABSTRACT:
The present invention concerns a method of preventing the staining and voiding in an aluminum layer. This staining and voiding was found to be caused by cross-contamination of nitrogen from other processing steps in a multi-chambered wafer processing device. The present invention avoids the staining and voiding by introducing a pumping-out step of an aluminum layer sputtering chamber to remove some of the nitrogen from the aluminum layer deposition chamber before sputtering the aluminum layer onto the silicon wafer. Alternately, the temperature of the aluminum layer deposition step can be reduced to 310.degree. C. or less to prevent the staining or voiding.

REFERENCES:
patent: 4770479 (1988-09-01), Tustison
patent: 4938857 (1990-07-01), Gilbery
patent: 5019233 (1991-05-01), Blake et al.

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