Method of eliminating edge effect in chemical vapor deposition o

Details Method of eliminating edge effect in chemical vapor deposition o Method of eliminating edge effect in chemical vapor deposition o

1998-01-20

2000-07-18

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438913, 427535, 427569, H01L 2144, H05H 100, H05H 124

Patent

active

060907053

ABSTRACT:
A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate surface. A susceptor in a reaction chamber is exposed to a plasma. A substrate contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge and non-edge surfaces. A plurality of substrates may be processed before reexposing the susceptor to the plasma.

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