Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-07-05
2005-07-05
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189011, C365S113000
Reexamination Certificate
active
06914801
ABSTRACT:
A method of operating a electrically programmable phase-change memory element. The method includes the step of applying an electrical signal to memory element which is sufficient to return the memory element to its pre-drift resistance state.
REFERENCES:
patent: 5357465 (1994-10-01), Challa
patent: 5696717 (1997-12-01), Koh
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6272669 (2001-08-01), Anderson et al.
patent: 2003/0026132 (2003-02-01), Chen et al.
patent: 2003/0156447 (2003-08-01), Kozicki
patent: 2003/0209971 (2003-11-01), Kozicki
Czubatyj Wolodymyr
Kostylev Sergey A.
Lowrey Tyler
Le Thong Q.
Ovonyx Inc.
Schlazer Philip H.
Siskind Marvin S.
LandOfFree
Method of eliminating drift in phase-change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of eliminating drift in phase-change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of eliminating drift in phase-change memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3407377