Method of eliminating buried contact resistance in integrated ci

Details Method of eliminating buried contact resistance in integrated ci Method of eliminating buried contact resistance in integrated ci

1997-12-12

1999-12-28

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438676, 438657, H01L 2144

Patent

active

060081252

ABSTRACT:
A method is disclosed for forming a buried contact within an integrated circuit ("IC"). Initially, a gate oxide layer is deposited onto a surface of a silicon substrate. A first polysilicon layer is deposited onto the gate oxide layer using an ionized cluster beam ("ICB") technique. The first polysilicon layer and the gate oxide layer are patterned and etched at predetermined locations, exposing the underlying silicon substrate surface at these locations. A small amount of undesirable native oxide grows on the exposed substrate surface. This oxide represents an unwanted impedance, which degrades IC device performance. The ICB machine is then used to deposit a second layer of polysilicon on the silicon substrate, including over the oxide layer regions and over the exposed silicon substrate surface at the predetermined locations. This second polysilicon deposition step breaks up and removes the unwanted native oxide from the silicon substrate.

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