Method of electron beam lithography on very high resistivity sub

Details Method of electron beam lithography on very high resistivity sub Method of electron beam lithography on very high resistivity sub

1998-01-26

2000-10-03

Wilczewski, Mary

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438700, 438703, 438167, 438571, 438576, H01L 21301, H01L 21338

Patent

active

061272728

ABSTRACT:
A method of performing electron beam lithography on high resistivity substrates including forming semiconductor material on a high resistivity substrate and etching the semiconductor material to form mesas with electrically interconnecting bridges between the mesas. Semiconductor devices are formed in the mesas employing electron beam lithography and charges generated by the electron beam lithography are dispersed along the interconnecting bridges thereby preventing charge accumulation on the mesas. The bridges are removed by etching or sawing during die separation.

REFERENCES:
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patent: 4109029 (1978-08-01), Ozdemir et al.
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4317125 (1982-02-01), Hughes et al.
patent: 5698900 (1997-12-01), Bozada et al.

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