Method of electroless deposition of thin metal and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S437000, C427S443100

Reexamination Certificate

active

10299070

ABSTRACT:
The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a film of a predetermined thickness is obtained. The fifth temperature-controlled conditions may be characterized by a pulse-mode or step-like variations of temperature in time with rapid cooling or heating for obtaining high degree of crystallinity or for increase in the rate of deposition. The method of the invention could be realized with the use of the electroless deposition apparatus with instantaneous cooling or heating of the object, e.g., a semiconductor substrate, in a deposition chamber.

REFERENCES:
patent: 5500315 (1996-03-01), Calvert et al.
patent: 5830805 (1998-11-01), Shacham-Diamand et al.
patent: 5950723 (1999-09-01), Heimanson et al.
patent: 6309524 (2001-10-01), Woodruff et al.
patent: 2002/0086102 (2002-07-01), Grunwald
patent: 2003/0235983 (2003-12-01), Li et al.
patent: 2004/0052963 (2004-03-01), Ivanov et al.
patent: 2004/0058468 (2004-03-01), Takahashi et al.
patent: WO 02/34962 (2002-05-01), None
U.S. Appl. No. 10/103,105, filed Mar. 22, 2002, Ivanov et al.
U.S. Appl. No. 10/247,895, filed Sep. 20, 2002, Ivanov et al.
“Electroless Nickel Plating”, Finishing publications Ltd, 1991, W. Riedel, p. 39.
Y. Lantasov et al. “Microelectronics EngineeRing”, No. 50 (2000), pp. 441-447, Fig. 2.
S.Lopatin , AMC, 2001.
International Search Report, PCT/US03/36735, mailed Oct. 13, 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of electroless deposition of thin metal and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of electroless deposition of thin metal and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of electroless deposition of thin metal and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3879406

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.