Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2006-01-31
2006-01-31
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S014000, C438S455000, C438S456000, C438S457000, C438S458000, C324S765010, C324S754120, C257S048000
Reexamination Certificate
active
06991948
ABSTRACT:
A method of characterizing a silicon-on-insulator (SOI) wafer, comprised of an insulating layer sandwiched between a semiconductor top layer and a semiconductor substrate, includes moving a pair of spaced conductors into contact with a surface of the wafer exposed on a side thereof opposite the substrate. First and second biases are applied to the substrate and at least one of the conductors. At least one of the first and second biases are swept from a first value toward a second value and the current flowing through the SOI wafer in response to said sweep is measured. At least one characteristic of the wafer is determined from the measured current as a function of the one swept bias.
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Le Dung A.
Solid State Measurements, Inc.
The Webb Law Firm
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