Method of edge bevel rinse

Details Method of edge bevel rinse Method of edge bevel rinse

2006-04-12

2008-08-19

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S450000, C438S312000, C438S716000, C438S947000, C257SE21252, C257SE21256, C257SE21257, C257SE21312, C257SE21314

Reexamination Certificate

active

07413963

ABSTRACT:
A method of edge bevel rinse. First, a wafer having a coating material layer disposed thereon is provided. A light beam is optically projected on the wafer to form a reference pattern. The reference pattern defines a central region, and a bevel region surrounding the central region on the surface of the wafer. Subsequently, the coating material layer positioned in the bevel region is removed according to the reference pattern.

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