Method of dry etching with hydrogen bromide or bromide

Details Method of dry etching with hydrogen bromide or bromide Method of dry etching with hydrogen bromide or bromide

1993-08-11

1995-12-05

Hearn, Brian E.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

437225, 216 67, 216 79, H01L 21306

Patent

active

054725640

ABSTRACT:
Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control in attaining vertical etching or taper etching with a desired taper angle by controlling the temperature of a mass to be etched, which mass is usually a semiconductor wafer.

REFERENCES:
patent: 4490209 (1984-12-01), Hartman
patent: 4744861 (1988-05-01), Matsunaga
patent: 4799991 (1989-01-01), Dockrey
patent: 4943344 (1990-07-01), Tachi et al.
patent: 5007982 (1991-04-01), Tsou

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