Method of dry-etching semiconductor devices

Details Method of dry-etching semiconductor devices Method of dry-etching semiconductor devices

2002-09-30

2009-08-11

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S715000, C134S001100

Reexamination Certificate

active

07572736

ABSTRACT:
A system, method and product of dry-etching a semiconductor device are disclosed, the system having a material supply for forming a material layer on the semiconductor substrate, a pattern for disposing at least one photoresist pattern on the material layer, a dry-etching chamber for housing a dry-etching process of the material layer, a chiller for adjusting the temperature of the chamber, the semiconductor substrate, the material layer and/or the photoresist for the dry-etching process, a stage for loading the semiconductor substrate in the dry-etching chamber, and a dry-etchant supply for dry-etching the material layer while the integrity of the photoresist pattern is enhanced by the adjusted temperature.

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