Method of dry etching in semiconductor device processing

Details Method of dry etching in semiconductor device processing Method of dry etching in semiconductor device processing

1991-07-29

1992-12-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

051731517

ABSTRACT:
A dry chemical etching method for etching one or more silicon oxide layers, such as SOG, TEOS, LTO or other types of deposited Si or SiO.sub.2 layers, provides for low selectivity (ratio) with high controllability and reliability with shorter etching times and increased wafer throughput and yield. The etching medium comprises C.sub.n F.sub.2n+2, wherein n is an integer, such as, CF.sub.4, C.sub.2 F.sub.6 or C.sub.3 F.sub.8, and an inert gas, such as, He, Ar or Xe. The inert gas as properly mixed with the fluoride gas provides a buffering effect on the fluorine radicals, F*, liberated in the plasma, so that control over the uniformity and the rate of etching can more easily be accomplished without fear of nonuniform etching or over-etching.

REFERENCES:
patent: 4226665 (1980-10-01), Mogab
patent: 4547260 (1985-10-01), Takada et al.
patent: 4676867 (1987-06-01), Elkins et al.

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