Method of dry etching and apparatus for making exhaust gas non-t

Details Method of dry etching and apparatus for making exhaust gas non-t Method of dry etching and apparatus for making exhaust gas non-t

1997-11-12

2000-12-05

Cain, Edward J.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438709, 438710, 438711, 438714, H01L 21302

Patent

active

061566667

ABSTRACT:
There is provided a method of dry etching a nickel film formed on a substrate by means of plasma of an etching gas, wherein the etching gas includes at least one of CO and CO.sub.2 gases, and the substrate is kept at a temperature in the range of -25.degree. C. to 40.degree. C. both inclusive, while the substrate is being etched. For instance, the etching gas is a mixture gas including CO and CO.sub.2 gases, a mixture gas including CO, CO.sub.2 and H.sub.2 gases, or a mixture gas including CO and H.sub.2 gases. The above-mentioned method provides higher etching accuracy, higher etching rate, and less etching damage in a substrate.

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