Method of dry etching a sample and dry etching system

Details Method of dry etching a sample and dry etching system Method of dry etching a sample and dry etching system

2006-03-07

2006-03-07

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

Reexamination Certificate

active

07009714

ABSTRACT:
A process recipe is controlled by processing reflection interference light on the surface of a wafer with a signal and etching is carried out by suppressing an increase in the surface roughness of the wafer during etching. That is, a dry etching method for use in a dry etching system comprising means of treating a sample by generating plasma in a vacuum process chamber and monitor means of monitoring the reflection interference light of the sample to be treated, the method comprising the step of detecting the spectrum of reflection interference light on the surface of the sample to be treated, the step of obtaining a residual from curve fit between a theoretical value estimated from the film reflection model of the surface of the wafer and the spectrum of reflection interference light, and the step of judging whether the residual from the curve fit falls within a predetermined value.

REFERENCES:
patent: 5440141 (1995-08-01), Horie
patent: 6301009 (2001-10-01), Tinker
patent: 6782337 (2004-08-01), Wack et al.

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