Method of dry etching

Details Method of dry etching Method of dry etching

1991-10-30

1994-03-22

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156657, H01L 2100

Patent

active

052960951

ABSTRACT:
A dry etching method for dry etching a silicon oxide film or a multilayer oxide film thereof which enables formation of contact window to good dimensional precision and with stable etching configuration in the process of film etching at submicron level. A compound gas containing a C element or S element or Cl element, and F element (e.g., CF.sub.4) is used as a principal gas, and a compound gas containing a C element and two or more of H elements (e.g., CH.sub.2 F.sub.2) as an additive gas is used, in the process of dry etching silicon oxide film or a multilayer film thereof. By using principal and additive gases having good step coverage of deposit produced by plasma reaction, it is possible to eliminate any etching residue and form contact windows having stable etching configuration and good dimensional accuracy in the process of film etching at submicron level. By using a compound gas containing a greater number of H element atoms than C element atoms, the deposit on the etching side wall can be a soluble one having a low F element content, such as (C.sub.x H.sub.y)n polymer, and can be readily removed through after-etching washing.

REFERENCES:
patent: 4283249 (1981-08-01), Ephrath
patent: 4678539 (1987-07-01), Tomita et al.

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