Method of driving ferroelectric memory

Details Method of driving ferroelectric memory Method of driving ferroelectric memory

1994-07-22

1996-05-07

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122

Patent

active

055153119

ABSTRACT:
A ferroelectric memory having a structure in which source and drain are formed on a semiconductor substrate, a ferroelectric thin film is formed on a channel region between the source and drain regions, and a ferroelectric gate transistor memory cell having a ferroelectric gate transistor structure including a gate electrode made of a conductive gate electrode, is arranged on the thin film. An X selection line (column) is connected to the gate of the memory cell, and a Y selection line (row line) is connected to the source and drain, or the column and row of the X and Y selection line are connected to the memory cell vice versa. The memory can be driven only by 1-transistor/1-cell without a pass gate transistor, and the data can be non-destructively read out by applying a voltage lower than the coercive voltage of the ferroelectric to the gate electrode, the source and drain.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 5198994 (1993-03-01), Natori
patent: 5307305 (1994-04-01), Takasu
patent: 5361225 (1994-11-01), Ozawa

Affiliated with

Also associated with

Rating

Method of driving ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of driving ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of driving ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1232557