Method of driving a non-volatile memory

Details Method of driving a non-volatile memory Method of driving a non-volatile memory

2006-09-12

2006-09-12

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000

Reexamination Certificate

active

07106618

ABSTRACT:
A method of driving a non-volatile memory which comprises a plurality of memory cells arranged in a two dimensional array, each having a field-effect transistor (1) whose gate and substrate are connected and a variable resistor element (2) comprising a phase change material; in which a specific voltage is applied to a specific word line (WLi), bit line (BLj) and voltage supply section (VA) so that a voltage which is higher than a forward rise voltage of the pn junction between the source and substrate of the field-effect transistor (1) is applied between the specific word line (WLi) and bit line (BLj), and then the voltage applied to the word line (WLi) is rapidly or gradually returned to the initial voltage to change an applicable variable resistor element (2) into the high or low resistance state, whereby data is deleted or recorded, and data is read by turning on the field-effect transistor (1) and detecting the resistance value of the applicable variable resistor element (2).

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