Method of drawing-up a single crystal using a double-crucible ap

Details Method of drawing-up a single crystal using a double-crucible ap Method of drawing-up a single crystal using a double-crucible ap

1986-11-24

1991-06-04

Sneed, H. M. S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566202, 156605, 422249, C30B 1500, C30B 3500

Patent

active

050211188

ABSTRACT:
A method and apparatus for drawing up a single crystal using a double-crucible apparatus and a liquid capsule process. The inner crucible of the double-crucible apparatus is attached to the outer crucible. The presence of through holes in the lower portions of the inner crucible allow communication between the molten raw material in the inner and outer crucibles. Through holes in the upper portion of the inner crucible allow communication between the liquid sealing agent covering the molten raw material in the inner and outer crucibles. Single crystals having uniform impurity concentration and few defects are rapidly grown because the interface between the liquid sealing agent and molten raw material in the inner crucible is even with the same interface in the outer crucible.

REFERENCES:
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patent: 4246064 (1981-01-01), Dewees et al.
patent: 4456499 (1984-06-01), Lin
patent: 4584174 (1986-04-01), Morioka et al.
patent: 4609425 (1986-09-01), Manteika et al.
Valcic, A., "A Process For Obtaining Single Crystals With Uniform Solute Concentraton", Solid State Electronics, vol. 5, 1960, pp. 131-134.
Weiner et al., "Liquid Encapsulated Czochralski Growth of GaAs", J. Electrochem. Soc., 118 (1971) pp. 301-306.
Nygren, S., "Liquid Encapsulated Growth of 35mm Diameter Single Crystals of GaP", J. Crys. Growth 19 (1973) 21-32.
2300 Journal of Crystal Growth 65(1983) Dec., No. 1/3, Amsterdam, Netherlands, Czochralski Growth By The Double Container Technique; D. Mateika et al.

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