Method of drawing a desired pattern on a target through exposure

Details Method of drawing a desired pattern on a target through exposure Method of drawing a desired pattern on a target through exposure

1987-07-17

1988-05-10

Fields, Carolyn E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

047437669

ABSTRACT:
In a method of drawing a desired pattern on a target through exposure thereof with an electron beam, a pattern area on the target surface is defined by first units of exposed areas arranged in rows and columns and is exposed by a first electron beam. A background area other than the pattern area on the target surface is also defined by secondary units of exposed areas which are arranged in rows and columns, and is exposed by a secondary electron beam to compensate for the proximity effect. The secondary units have a size larger than that of the first units and the second electron beam forms on the target surface a second beam spot which is larger than the first beam spot formed on the target surface by the first electron beam so that the background area is exposed in a reduced period of time.

REFERENCES:
patent: 4264711 (1981-04-01), Greeneich
patent: 4463265 (1984-07-01), Owen et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 3A, Aug. 1982, p. 986, New York, US; N. G. Anantha et al.: "Proximity Correction In E--Beam Systems".
Journal of Vacuum Science & Technology, "Data Composition Method for Raster--Scan Exposure System", Masahiko Sumi et al. vol. 16, No. 6, Nov./Dec. 1979, pp. 1809-1813.
G. Owen and P. Rissman J. Application Phys. 54(6) Jun., 1983.

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