Method of double-sided etching

Details Method of double-sided etching Method of double-sided etching

2007-08-14

2007-08-14

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S719000

Reexamination Certificate

active

10711883

ABSTRACT:
A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding layer, and the wafer in the through regions is completely removed from the top surface.

REFERENCES:
patent: 6458615 (2002-10-01), Fedder et al.
patent: 6541831 (2003-04-01), Lee et al.
patent: 6794217 (2004-09-01), Lee et al.
patent: 6818464 (2004-11-01), Heschel
patent: 2005/0142688 (2005-06-01), Partridge et al.
patent: 2005/0227400 (2005-10-01), Chase et al.

Affiliated with

Also associated with

Rating

Method of double-sided etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of double-sided etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of double-sided etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3879814