Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-01-18
2005-01-18
Nguyen, Van Thu (Department: 2824)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S482000, C438S682000, C438S597000
Reexamination Certificate
active
06844248
ABSTRACT:
A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020dopant atoms per cm3of silicon.
REFERENCES:
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 4190852 (1980-02-01), Warner, Jr.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5538564 (1996-07-01), Kaschmitter
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5562781 (1996-10-01), Ingram et al.
patent: 5589008 (1996-12-01), Keppner
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5711824 (1998-01-01), Shinohara et al.
patent: 5730808 (1998-03-01), Yang et al.
patent: 5940693 (1999-08-01), Maekawa
patent: WO9713280 (1997-04-01), None
Haque, M. et al., “Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures,”Materials Research Society Symposium, vol. 258, 1992, pp. 1037-1042.
Haque, M. S. et al., “Degradation and Failure Mechanisms of a-Si:H Solar Cells with Aluminum Contacts,”IEEE First ECPEC, 1994, pp. 642-645.
Luque, A. et al., “Internal Quantum Efficiency of Back Illuminated n+pp+Solar Cells,”Revue De Physique Appliquee, Dec. 1978, pp. 629-632.
Czbatyj, W. et al., “Comparison of low temperature polysilicon crystal growth on low cost substances,”J. Vac Sci Technol. A, vol. 9, No. 2, Mar./Apr. 1991, pp. 294-298.
Mayer & Lau, “Metallization and Phase Diagrams,”McMillan Publishing, 1998, pp. 276-283.
Francis, David H., “Trends in Flip Chip and Advanced Interconnection,”1997 International Conference on Multichip Modules, pp. 25-28.
Al-Nuaimy, E.A., “Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors,”Appl. Phys. Lett. 69(25), Dec. 16, 1996, pp. 3857-3859.
Smith, P.M. et al., “Excimer laser crystallization and doping of silicon films on plastic substrates,”Appl. Phys. Lett. 70(3), Jan. 20, 1997, pp. .342-344.
Konenkamp, R. et al., “Reversible Doping of Hydrogenated Amorphous Silicon,”Solid State Communications, 1990, vol. 3, No. 5, pp. 323-326.
Saito, N. et al., “Doping effects of aluminum on the properties of hydrogenated amorphous silicon-carbon alloy films prepared by magnetron sputtering,”Philosophical Magazine B, 1990, vol. 62, No. 5, pp. 527-536.
Berry, W.B., “Low Temperature Diffusivity for Aluminum and Silver in Amorphous Silicon.”
Lathrop, J.W. et al., “Failure Mechanisms in Amorphous Silicon Solar Cells.”
Fukada, N., “Thermal Degradation of a-Si:H Solar Cells,”Technical Digest of the International PVSEC-1, Kobe, Japan, pp. 229,231.
Lathrop, J.W., “Accelerated Stress Testing of a-Si:H Cells,”Proc. 2nd Int. Photovoltaic Science and Engineering Conference, Beijing, China, Aug. 1986, pp. 386-389.
Delahoy, A.E., “Amorphous Silicon-Aluminum Materials,”Research on High Efficiency Single Junction Monolithic Thin Film a-Si Solar Cells, Nov. 1985, pp. 13-20.
Willing, F. et al., “Thermal Stability of Interconnected a-Si:H Solar Modules.”
Baert, K.A. et al., “Amorphous-Silicon Solar Cells with Screen-Printed Metallization,”IEEE Transactions on Electron Devices, vol. 37, No. 3, Mar. 1990, pp. 702-706.
Ishihara, S. et al., “Low-temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes,”J. Appl. Phys. 62(3), Aug. 1, 1987, pp. 837-840.
Haque, M.S. et al., “Aluminum-induced crystallization and couter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures,”J. Appl. Phys. 79(10), May 15, 1996, pp. 7529-7536.
Haque, M.S. et al., “Aluminum-induced degradation and failure mechanism of a-Si:H Solar Cells,”Solar Energy-Materials and Solar Cells, Jun. 1996, pp. 543-555.
Haque, M.S. et al., “Interaction of aluminum with hydrogenated amorphous silicon at low temperatures,”J. Appl. Phys. 75(8), Apr. 15, 1994, pp. 3928-3935.
Radnoczi et al., “A1 induced and Sb-doped crystallization of a-Si”, May 1, 1991, Journal of Applied Physics, vol. 69, No. 9, pp. 6394-6399.
Gong et al., “A1-doped and Sb-doped polycrystalline silicon obtained by means of metal-inductied crystallization”, Nov. 1, 1987, Journal of Applied Physics, vol. 62, No. 9, pp. 3726-3732.
Brown William D.
Haque M. Shahidul
Naseem Hameed A.
Meadows James H.
Medicus Associates
Nguyen Van Thu
Smith Brad
The Trustees of the University of Arkansas
LandOfFree
Method of doping silicon, metal doped silicon, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of doping silicon, metal doped silicon, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of doping silicon, metal doped silicon, method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3421604