Method of doping sidewall of isolation trench

Details Method of doping sidewall of isolation trench Method of doping sidewall of isolation trench

2006-04-18

2006-04-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S524000, C257S304000

Reexamination Certificate

active

07029997

ABSTRACT:
A method of doping sidewalls of an isolation trench is provided. A substrate having a trench thereon is provided. A blocking layer is formed within the trench such that the top surface of the blocking layer is lower than the top surface of the substrate. A sidewall doping process is performed to form a doped region in the substrate at the upper trench sidewall. The blocking layer is removed from the trench. Because the blocking layer prevent dopants from reaching the bottom half of the trench during the sidewall doping process, junction leakage at the bottom section of the trench is prevented.

REFERENCES:
patent: 6252277 (2001-06-01), Chan et al.
patent: 6744089 (2004-06-01), Wu
patent: 6767813 (2004-07-01), Lee et al.
patent: 2005/0012173 (2005-01-01), Sheu et al.

Affiliated with

Also associated with

Rating

Method of doping sidewall of isolation trench does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of doping sidewall of isolation trench, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of doping sidewall of isolation trench will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3533554