Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Patent
1997-06-30
1999-03-30
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
438503, 117952, H01L 2120
Patent
active
058888861
ABSTRACT:
High p-type impurity concentration levels are achieved in Group III nitride semiconductor layers by depositing a nitrogen-rich surface onto a supporting layer while impeding the flow of Group III element reactant. Thereafter, the Group III element source is introduced into the reactor to generate a p-type region having a high impurity concentration. The flow of the reactant from the active nitrogen source is kept below about 300 sccm and the temperature of the reactor is reduced below 1075.degree. C. in order to provide improved surface characteristics.
REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5334277 (1994-08-01), Nakamura
patent: 5433169 (1995-07-01), Nakamura
patent: 5438198 (1995-08-01), Ebitani et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5730802 (1998-03-01), Ishizumi et al.
K. Boer, Survey of Semiconductor Physics, Van Nostrand Reinhold, p. 474 (no month given) 1990.
T. Kuech et al., "OMVPE of Compound Semiconductors", in Thin Film Processes II, edited by Vossen et al., Academic Press, pp. 387, 427, 431-433 (no month given) 1991.
Maruska et al, "Violet Luminescence of Mg-doped GaN", Applied Physics Letters, vol. 22, No. 6, 15 Mar. 1973.
Amano et al, "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Japanese Journal of Applied Physics, vol. 28, No. 12, Dec. 1988, pp. L2112-L2114.
Nakamura et al, "Thermal Annealing Effects on P-Type Mg-Doped GaN Films", Japanese Journal of Applied Physics, vol. 31 (1992) pp. L139-L142.
Dupuis et al, "Preparation and Properties of Ga.sub.1-x A1.sub.x As-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition", IEEE Journal of Quantum Electronics, vol. QE-15, No. 3, 1979, pp. 128-135.
Manasevit, "Recollections and Reflections of MO-CVD", Journal of Crystal Growth 55, (1981).
Manasevit et al, "The Use of Metal-Organics in the Preparation of Semiconductor Materials", Journal of the Electrochemical Society, vol. 116, No. 12, Dec. 1969, pp. 1725-1732.
Cullen et al, "Heteroepitaxial Semiconductors for Electronic Devices", pp. 106-149, 1978.
"Overview of the OMVPE Process", pp. 1-53.
Major, Jr. Jo Stephen
Sverdlov Boris N.
Bowers Charles
Christianson Keith
SDL Inc.
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