Method of doping field-effect-transistors (FETs) with...

Details Method of doping field-effect-transistors (FETs) with... Method of doping field-effect-transistors (FETs) with...

2007-06-26

2010-11-02

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

C438S149000, C438S154000, C438S197000, C257SE21561

Reexamination Certificate

active

07825003

ABSTRACT:
A method for fabricating a FET transistor for an integrated circuit by the steps of forming recesses in a substrate on both sides of a gate on the substrate, halo/extension ion implanting into the recesses, and filling the recesses with embedded strained layers comprising dopants for in-situ doping of the source and drain of the transistor. The stress/strain relaxation of the resulting transistor is reduced.

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